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CY7C1049GE Datasheet 4-Mbit (512K words x 8 bit) Static RAM

Manufacturer: Cypress (now Infineon)

Download the CY7C1049GE datasheet PDF. This datasheet also includes the CY7C1049G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CY7C1049G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC.

Both devices are offered in single and dual chip-enable options and in multiple pin configurations.

The CY7C1049GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

Overview

CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code.

Key Features

  • High speed.
  • tAA = 10 ns.
  • Embedded ECC for single-bit error correction[1].
  • Low active and standby currents.
  • Active current: ICC = 38 mA typical.
  • Standby current: ISB2 = 6 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 36-pin SOJ and 44-pin TSOP II packages Fun.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Cypress Logo CY7C1049GN 4-Mbit (512K words x 8 bit) Static RAM Cypress

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